因此,TG5032CGN和TG5032SGN有源晶体均适用于对频率稳定性有高要求的应用场景。TG5032CGN和TG5032SGN系列VC-TCXO晶振的工作电压范围宽泛,非常适用于低电压系统的设计,使得用户在有更多的选择性,可用于常见的3.3V、5V电路设计,由于这种晶振具有较高的频率稳定度,而且体积小,在小电流下能够快速启动,在低电压系统中被广泛应用通讯设备晶振,工业控制,消费电子,智能安防,物联网,车载电子,光电技术及各种变频调速设备等通讯设备。
通讯设备专业晶振X1G005231001300压控温补晶体振荡器
产品编码 | 型号 | 频率 | 尺寸 | 输出波 | 电源电压 | 精度 | 工作温度 |
X1G005231000400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231000500 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231000900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001000 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001100 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001200 | TG5032CGN | 12.800000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001300 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001500 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001600 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001700 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001900 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002000 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002300 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002500 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002600 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002700 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002800 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002900 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003000 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003100 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
产品编码 | 振荡器 | 频率 | 尺寸 | 输出波 | 电源电压 | 精度 | 工作温度 |
X1G005241000200 | TG5032SGN | 19.200000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241000300 | TG5032SGN | 25.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241000400 | TG5032SGN | 40.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241000700 | TG5032SGN | 10.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241000800 | TG5032SGN | 26.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241000900 | TG5032SGN | 19.200000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241001000 | TG5032SGN | 19.200000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 2.700 to 3.000 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241001200 | TG5032SGN | 19.200000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 2.700 to 3.000 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241001300 | TG5032SGN | 40.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241001400 | TG5032SGN | 10.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005241001500 | TG5032SGN | 26.000000MHz | 5.00x3.20x1.45mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
通讯设备专业晶振X1G005231001300压控温补晶体振荡器
爱普生TG5032CGN和TG5032SGN压控温补晶振差别在于输出模式,TG5032CGN采用CMOS输出,TG5032SGN则采用削波正弦波输出,设计者可根据应用需要进行合理选型。另外,两者均采用小尺寸封装,外部尺寸仅为5.0x3.2x1.45mm贴片晶振,非常节省空间,便于设计与使用,适用于包括紧凑型系统的参考时钟、Stratum3、超小型蜂窝基站和网络系统等应用领域。