可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

随着市场小型化、多功能、高信赖度的电子产品需求量大增，产品开发周期时间要求越来越短，传统的石英晶体性能优异，但设计制造周期相对较长，如果有工程师因为项目急需特殊频点，特殊封装的晶振产品用于设计测试，很有可能无法短期内获得对应频点的样品而可能耽误设计周期，影响项目交付进度。扩展频率晶振的出现极大的解决了工程师对新产品晶振的实时变更需求。

爱普生展频晶振SG-9101系列是一种通过调整时钟频率降低EMI电磁干扰的可编程晶振，频率可编程范围0.67MHz~170MHz（每步1ppm），扩展频率范围±0.25%~±4%。SG-9101新品提供更宽广的操作温度范围，及降低50%的消耗电流，SG-9101使用时可选购搭配现有的SG-Writer II专用刻录器，即可自行定义SG-9101可降低电磁干扰（EMI）展频晶体振荡器的中心频率。

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

有源晶体	频率	型号	尺寸(长宽高)	输出波	电源电压	工作温度
X1G005321001100	27.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321001200	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321001300	40.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321001400	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321001500	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321001600	66.666000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321001700	66.666000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321001800	40.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321001900	74.250000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321002000	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321002100	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321002200	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321002300	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321002400	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321002500	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321002600	20.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321002700	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321002800	40.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321002900	80.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321003000	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321003100	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321003200	15.728640MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321003300	37.125000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C

SG-9101系列可以分为：SG-9101CA 7050 SG-9101CB 5032 SG-9101CE 3225 SG-9101CG 2520，而其中SG-9101CE是小尺寸3225有源晶振同时也是销量很高的一款扩展频率晶振。SG-9101CE频率可编程范围0.67MHz~170MHz（每步1ppm），扩展频率范围±0.25%~±4%。SG-9101CE新品提供更宽广的操作温度范围，及降低50%的消耗电流。

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

X1G005321003400	24.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321003500	37.125000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321003600	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321003700	33.333000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321003800	33.333000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321003900	26.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321004000	24.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321004100	10.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321004200	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321004300	24.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321004600	100.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321004700	49.152000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321004800	12.288000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321004900	48.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321005000	32.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321005100	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321005200	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321005300	25.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321005600	12.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321005700	15.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C
X1G005321005800	34.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321005900	148.500000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321006000	34.000000MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005321006100	11.289600MHz	SG-9101CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 85 °C

可编程展频晶振X1G005321003900便捷式设备可降低EMI电磁干扰的影响

SG-9101可编程晶体振荡器的消耗电流比现行量产产品更大幅降低了75%。SG-9101的展频时钟晶振提供几种类型的调制方式，可以实现б值为±0.5%、±0.75%、±1%、±1.5%、±2%和0.25%的调制，实践证明引入扩展频谱时钟晶体振荡器调制引入的时钟信号抖动很小。SG-9101通过动态改变时钟频率，有效降低电磁辐射功率，减少EMI电磁干扰的影响，进而解决EMC辐射超标的问题。