爱普生贴片式石英晶振振荡器,低电压启动功率,并且有多种电压供选择,比如有1.8V,2.5V,3.3V,3.8V,5V等,产品被广泛应用于,平板笔记本,GPS系统,光纤通道,千兆以太网,串行ATA,串行连接SCSI,PCI-Express的SDH / SONET发射基站等领域.符合RoHS/无铅.
爱普生晶振SG2016CAN，小体积晶振尺寸2.0x1.6mm，石英晶体振荡器，有源晶体，四脚贴片晶振，频率范围：1.2MHz至75MHz，电源电压：1.8V至3.3V，产品具有高精度超小型的表面贴片型轻薄型晶体振荡器,最适用于移动通信终端的基准时钟等移动通信领域.比如智能手机,无线通信,卫星导航,平台基站等较高端的数码产品,晶振本身小型,薄型具备各类移动通信的基准时钟源用频率,贴片晶振具有优良的电气特性,耐环境性能适用于移动通信领域,满足无铅焊接的高温回流温度曲线要求.
SG2016CAN系列编码X1G004801000300具有高精度超小型晶体振荡器
Product Number
Model
Frequency
LxWxH
Output Wave
Supply Voltage
X1G004801000200
SG2016CAN
24.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801000300
SG2016CAN
26.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801000700
SG2016CAN
12.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801001200
SG2016CAN
25.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801001300
SG2016CAN
50.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801001400
SG2016CAN
16.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801001800
SG2016CAN
20.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002000
SG2016CAN
48.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002100
SG2016CAN
27.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002400
SG2016CAN
25.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002600
SG2016CAN
33.333300 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002700
SG2016CAN
10.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002800
SG2016CAN
50.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801002900
SG2016CAN
10.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801003000
SG2016CAN
4.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801003100
SG2016CAN
24.576000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801003500
SG2016CAN
25.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801003600
SG2016CAN
40.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801003900
SG2016CAN
26.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801004000
SG2016CAN
24.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801004400
SG2016CAN
12.288000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801004500
SG2016CAN
8.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
X1G004801004600
SG2016CAN
8.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
| X1G004801004900 | SG2016CAN | 4.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005000 | SG2016CAN | 12.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005100 | SG2016CAN | 12.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005200 | SG2016CAN | 12.288000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005300 | SG2016CAN | 12.288000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005400 | SG2016CAN | 14.745600 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005500 | SG2016CAN | 14.745600 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005600 | SG2016CAN | 16.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005700 | SG2016CAN | 20.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005800 | SG2016CAN | 20.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801005900 | SG2016CAN | 24.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006000 | SG2016CAN | 24.576000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006100 | SG2016CAN | 27.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006200 | SG2016CAN | 32.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006300 | SG2016CAN | 32.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006400 | SG2016CAN | 33.330000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006500 | SG2016CAN | 33.330000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006600 | SG2016CAN | 33.333300 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006700 | SG2016CAN | 40.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006800 | SG2016CAN | 48.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801006900 | SG2016CAN | 48.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
| X1G004801007000 | SG2016CAN | 50.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V |
SG2016CAN系列编码X1G004801000300具有高精度超小型晶体振荡器
有源晶振是用石英晶体组成的，石英晶片之所以能当为晶体振荡器使用，是基于它的压电效应：在晶片的两个极上加一电场，会使晶体产生机械变形；在石英晶片上加上交变电压，晶体就会产生机械振动，同时机械变形振动又会产生交变电场，虽然这种交变电场的电压极其微弱，但其振动频率是十分稳定的。当外加交变电压的频率与晶片的固有频率（由晶片的尺寸和形状决定）相等时，机械振动的幅度将急剧增加，这种现象称为“压电谐振”。
村田晶振,ROHS环保晶振,XRCLK52M000F1QA0J1晶振
村田晶振,贴片石英晶振,陶瓷晶振,CSACW22M5X53-R0晶振
村田晶振,高性能晶振,SMD晶振,CSTCW50M0X53-R0晶振
